Researchers at the University of Chicago Pritzker School of Molecular Engineering have made unexpected progress toward developing a new optical memory that can quickly and energy-efficiently store and ...

Scientists in Germany and France have built a smarter, greener memory tech for devices This new SOT-MRAM memory slashes ...

Researchers demonstrate a new strategy for magnetization reversal in multiferroic materials, opening pathways to more energy-efficient electronics. (Nanowerk News) As the digital world demands greater ...

AI is driving demand and higher prices for DRAM and NAND into 2026.  Products using non-volatile memories to replace NOR and SRAM in embedded applications are growing.

A new class of magnetism called altermagnetism has been imaged for the first time in a new study. The findings could lead to the development of new magnetic memory devices with the potential to ...

Scientists in Japan have confirmed that ultra-thin films of ruthenium dioxide belong to a newly recognized and powerful class of magnetic materials called altermagnets. These materials combine the ...

Researchers have developed a new theory that explains why tunnel magnetoresistance (TMR)—used in magnetic memory and other technologies—oscillates with changes in the thickness of the insulating ...

It is anticipated that within just a few decades, the surging volume of digital data will constitute one of the world's largest energy consumers. Now, researchers at Chalmers University of Technology, ...

This collection supports and amplifies research related to SDG 9 - Industry, innovation and infrastructure. Recent advances in understanding and manipulating spin, orbital, and charge currents via ...

Over on his blog our hacker [Scott Baker] has a Magnetic Bubble Memory Mega-Post. If you haven’t heard of magnetic bubble memory before it’s basically obsolete nonvolatile memory. Since the 1970s when ...

The discovery of electric-field-induced magnetization reversal perpendicular to the electric field in multiferroic materials could revolutionize memory design, enabling more space- and ...