EDN

TDI claims to develop world’s first GaN bulk substrates

GAITHERSBURG, Maryland — Technologies and Devices International Inc. (TDI) here announced a major breakthrough, claiming it has produced the industry's first true gallium nitride (GaN) bulk substrates ...
Semiconductor Engineering

Lateral 3 kV AlN SBDs on Bulk AlN Substrates By MOCVD

A new technical paper titled “3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD” was published by researchers at Arizona State University. “This letter reports the first demonstration ...
Business Wire

Crystal IS and Asahi Kasei have achieved 99% usable area on 100 mm bulk aluminum nitride substrate

NEW YORK & TOKYO & DÜSSELDORF--(BUSINESS WIRE)--Crystal IS, an Asahi Kasei company, today announced the successful serial production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates ...
Semiconductor Engineering

A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates

Compare 3 process flows in terms of robustness to process variation to see which one has the lowest likelihood of processing failures. Sub-5 nm logic nodes will require an extremely high level of ...